IRFZ40 IRFZ40fi n - channel enhancement mode power mos transistors n typical r ds(on) = 0.022 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capability n 175 o c operating temperature applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) internal schematic diagram type v dss r ds(on) i d IRFZ40 IRFZ40fi 50 v 50 v < 0.028 w < 0.028 w 50 a 27 a 1 2 3 to-220 isowatt220 july 1993 absolute maximum ratings symbol parameter value unit IRFZ40 IRFZ40fi v ds drain-source voltage (v gs = 0) 50 50 v v dgr drain- gate voltage (r gs = 20 k w )5050v v gs gate-source voltage 20 v i d drain current (cont.) at t c = 25 o c5027a i d drain current (cont.) at t c = 100 o c3519a i dm ( ) drain current (pulsed) 200 200 a p tot total dissipation at t c = 25 o c15045w derating factor 1 0.3 w/ o c v iso insulation withstand voltage (dc) ? 2000 v t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area 1 2 3 1/9
thermal data to-220 isowatt220 r thj-case thermal resistance junction-case max 1 3.33 o c/w r thj-amb r thc-s t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 50 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 400 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 100 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 35 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 50 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a22.94v r ds(on) static drain-source on resistance v gs = 10v i d = 29 a 0.022 0.028 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 50 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 29 a 17 22 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 1700 630 200 2200 850 260 pf pf pf IRFZ40/fi 2/9
electrical characteristics (continued) switching resistive load symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on time rise time turn-off delay time fall time v dd = 25 v i d = 29 a r g = 4.7 w v gs = 10 v (see test circuit) 50 110 60 25 70 160 90 35 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge i d = 64 a v gs = 10 v v dd = max rating x 0.8 (see test circuit) 50 15 27 70 nc nc nc source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 50 200 a a v sd ( * ) forward on voltage v gs = 0 i sd = 50 a 2 v t rr q rr reverse recovery time reverse recovery charge i sd = 50 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 150 0.45 ns m c ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for to-220 safe operating area for isowatt220 IRFZ40/fi 3/9
thermal impedance for to-220 derating curve for to-220 output characteristics thermal impedance for isowatt220 derating curve for isowatt220 transfer characteristics IRFZ40/fi 4/9
transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized gate threshold voltage vs temperature IRFZ40/fi 5/9
source-drain diode forward characteristics unclamped inductive load test circuit unclamped inductive waveforms switching time test circuit gate charge test circuit IRFZ40/fi 6/9
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c IRFZ40/fi 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.4 0.7 0.015 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 ? f l3 g1 123 f2 f1 l7 l4 isowatt220 mechanical data p011g IRFZ40/fi 8/9
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a IRFZ40/fi 9/9
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